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Low-noise, fast-tuning light source for coherent Raman microscopy and stimulated Raman microscopy

Low-noise, fast-tuning light source for coherent Raman microscopy and stimulated Raman microscopy

Background principle  

Optical imaging technology has become a widely used microscopic imaging technology with the characteristics of non-contact measurement, no damage to the sample, high spatiotemporal resolution and high detection sensitivity. The fluorescent labeled imaging method has the advantages of high acquisition sensitivity and a wide variety of fluorescent labels, and is widely used in the biomedical field. However, its application is limited by its interference and photobleaching. Based on infrared spectroscopy and Raman spectroscopy microscopy technology to detect the natural vibration frequency of sample molecules, biological samples do not need to be pre-labeled, and directly use the characteristic spectral signal as imaging contrast, which has the advantages of molecular feature selectivity, and it has been widely used in biomedical microscopy, such as live cell, tissue or DNA imaging. However, the molecular spectral signal intensity is weak, which limits the detection sensitivity, laser power and data acquisition. Coherent Anti-Stokes Raman Scattering (CARS), which is also based on molecular vibrational energy levels, is a third-order nonlinear optical process, which produces a strong stimulated resonance signal and a certain directionality, which makes the CARS signal collection more efficient.

Appliance device  

Although CARS are very weak, they are spectrally distinguishable. But for stimulated Raman scattering, small changes in the pump light or Stokes beam must be measured. Therefore, the latter needs to be detected based on lock-in amplification techniques, which means that for SRS, ultra-low laser noise intensity is required, ideally below the shot noise limit. At the same time, laser scanning imaging requires good long-term average power stability and reproducibility, as well as fast tuning while maintaining its spatiotemporal properties.

The vast majority of CRS work is based on picoseconds, pumped optical parametric oscillators (OPOs), and timing-synchronized Titanium-sapphire laser systems. Stuttgart Instruments offers wideband, fast-tuning, and low-noise CRS light sources with excellent stability using a ytterbium-doped solid-state laser-pumped fiber feedback OPO system.

The system uses a ytterbium-doped solid-state laser as the pump light source, generating a central wavelength of 1043nm, an average power of 6W, about 390fs (marked as 320fs in the figure), and a repetition rate of 75MHz. Among them, 2.5W is used to pump OPO to generate a 1380-2000nm near-infrared laser, which is narrowed on the spectrum through an air gap etalon to produce a Stokes beam with a pulse width of 600mW and 1.3ps. The frequency doubling is then generated by PPLN as the Raman pump light. In order to ensure the synchronization of pulse timing, a delay line is added to the Stokes beam path for adjustment.

Characteristics of light source 

The near-infrared laser generated by OPO can be tuned between 1.38um and 2.02um, with an output linewidth of 9-20nm and a pulse width of 200-300fs, and the Stokes optical power after staltalon is 600mW@1043.1nm and 0.71nm, corresponding to a CRS measurement resolution of 6.5cm-1.

It produces 750nm~940nm pump light, and the output is close to the Fourier limit in the whole tuning range, with a typical pulse duration of 1.1ps. Stokes reaches the shot noise limit at 150 KHz, the OPO and pump light are slightly higher, but the shot noise limit can be reached above 1 MHz, and a low-noise CRS spectrum can be obtained.

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Low-noise, fast-tuning light source for coherent Raman microscopy and stimulated Raman microscopy

Low-noise, fast-tuning light source for coherent Raman microscopy and stimulated Raman microscopy

fangyun DAI @

Optical imaging technology has become a widely used microscopic imaging technology with the characteristics of non-contact measurement, no damage to the sample, high spatiotemporal resolution and high detection sensitivity. The fluorescent labeled imaging method has the advantages of high acquisition sensitivity and a wide variety of fluorescent labels, and is widely used in the biomedical field. However, its application is limited by its interference and photobleaching. Based on infrared spectroscopy and Raman spectroscopy microscopy technology to detect the natural vibration frequency of sample molecules, biological samples do not need to be pre-labeled, and directly use the characteristic spectral signal as imaging contrast, which has the advantages of molecular feature selectivity, and it has been widely used in biomedical microscopy, such as live cell, tissue or DNA imaging. However, the molecular spectral signal intensity is weak, which limits the detection sensitivity, laser power and data acquisition. Coherent Anti-Stokes Raman Scattering (CARS), which is also based on molecular vibrational energy levels, is a third-order nonlinear optical process, which produces a strong stimulated resonance signal and a certain directionality, which makes the CARS signal collection more efficient.

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Attenuation and shrinking beam simulation for beam quality measurement of high-power lasers

Attenuation and shrinking beam simulation for beam quality measurement of high-power lasers

fangyun DAI @

Beam quality factor is the main parameter to characterize the transverse pattern of high-power lasers, and in order to solve the problem that the current beam quality analyzer can only be used for beam quality evaluation of small-aperture and low-power lasers, the principle and simulation of attenuation and beam reduction technology for beam quality measurement of high-power lasers were studied. The simulation model of the attenuation and shrinking beam component is established, and the thermally induced aberrations of optical components under high-power laser are studied by using the finite element method, and it is concluded that when the peak-to-trough (PV) value of thermally induced aberrations is less than 82 nm, the influence on the beam quality factor is less than 5%. As the beam passes through the attenuation component, if debias occurs, the beam quality factor will be smaller. Based on the Zenic polynomial and the beam quality factor calculation model, the influence of the wavefront distortion of the beam shrinking component on the measurement is studied and analyzed, and it is seen through the Zemax simulation analysis that the influence on the beam quality factor measurement is less than 5% when the angle of view between the incident light and the center optical axis of the beam shrinking component is less than 7° during the assembly and adjustment.
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Depth: Research progress of high-power semiconductor lasers

Depth: Research progress of high-power semiconductor lasers

HighPowerLaser @

Laser is another major invention of mankind since the 20th century, after atomic energy, electronic computers, and semiconductors. Semiconductor laser science and technology takes semiconductor laser devices as the core, covering the study of the law, generation method, device technology, control means and application technology of stimulated radiation amplification of light, and the required knowledge integrates geometric optics, physical optics, semiconductor electronics, thermodynamics and other disciplines.

After more than 50 years of development, semiconductor laser, as a world-class research direction, has developed by leaps and bounds along with international scientific and technological progress, and has also benefited from breakthroughs in various related technologies, materials and processes. The progress of semiconductor laser has received great attention and attention in the international scope, not only in the field of basic science and continuous research and deepening, the level of science and technology continues to improve, but also in the field of application continues to expand and innovate, the application of technology and equipment emerge in an endless stream, the application level has also been greatly improved, in the national economic development of all countries in the world, especially in the fields of information, industry, medical and national defense has been an important application.

At present, the development of semiconductor lasers in the world is in a new stage of rapid development, and China's laser science and technology has basically maintained a trend of synchronous development with the world. From the perspective of comprehensive social development, industrial economic upgrading, national defense and security application and economic structure transformation, from the perspective of national competitive development, more clear needs are put forward for the comprehensive innovation of semiconductor laser technology and the transformation and development of industrial applications. In this paper, the development history and current situation of semiconductor lasers are reviewed, and the achievements of Changchun Institute of Optics, Fine Mechanics and Physics in recent years in high-power semiconductor lasers, especially in high-power semiconductor laser laser light sources, vertical cavity surface-emitting lasers and new laser chips.

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